Technical evaluation of third generation low light level imaging devices

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology

Volumn 24, Issue 5, 2004, Pages 389-392

  Qian, Yunsheng ^a   Chang, Benkang ^a   Qiu, Yafeng ^a   Du, Xiaoqing ^a   Du, Yujie ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electron diffusion length; Negative electron affinity; Spectral response; Surface electron escape probability; The third generation (G III) of low light level (LLL) image intensifier

Indexed keywords

CATHODES; COMPUTER APPLICATIONS; COMPUTER HARDWARE; COMPUTER SOFTWARE;

ELECTRON DIFFUSION LENGTH; NEGATIVE ELECTRON AFFINITY; PROTOTYPE INSTRUMENT; SPECTRAL RESPONSE; SURFACE ELECTRON ESCAPE PROBABILITY; THIRD GENERATION OF LOW LIGHT LEVEL IMAGE INTENSIFIER;

IMAGE INTENSIFIERS (ELECTRON TUBE);

EID: 11444265086     PISSN: 02539748     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Olsen G H, Szostak D J, Zamerowski T J et al. High-performance GaAs photocathodes. Journal of Applied Physics, 1977, 48(3): 1007-1008
2. 1-xP/GaAs:(Cs-O) transmission photocathodes. Journal of Applied Physics, 1979, 50(4): 2930-2935
3. Antypas G A, Escher J S, Edgecumbe J et al. Broadband GaAs transmission photocathode. Journal of Applied Physics, 1978, 49(7): 4301
4. Andre J P, Giittard P, Hallais J et al. GaAs photocathodes for low light level imaging. Journal of Crystal Growth, 1981, 55: 235-245
5. Williams B F, Tietjien J J. Current status of negative electron affinity devices. Proceedings of the IEEE, 1971, 59(10): 1489-1497