Growth of ZnS films by chemical vapor deposition of Zn[S 2 CN(CH 3 ) 2 ] 2 precursor

Applied Surface Science

Volumn 241, Issue 3-4, 2005, Pages 493-496

  Lee, Everett Y M ^a   Tran, Nguyen H ^a,b   Lamb, Robert N ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF WESTERN SYDNEY   (Australia)

Author keywords

Dimethyl dithiocarbamate; Single source chemical vapor deposition; Zinc sulfide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; EVAPORATION; IMPURITIES; LIGHT EMISSION; LIGHT MODULATION; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

DEPOSITION RATE; DIMETHYL DITHIOCARBAMATE; SINGLE SOURCE CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 11444249694     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.07.003     Document Type: Article

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