Raman investigation of structural changes induced by e-beam irradiation in Ge doped silica MCVD glasses

Materials Science and Engineering: B

Volumn 107, Issue 1, 2004, Pages 46-52

  Jacqueline, A S ^a   Poumellec, B ^a   Chervin, J C ^b   Garcia Blanco S ^c   Esnouf, S ^d  

^a UNIVERSITÉ PARIS SUD   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

^d LABORATOIRE DES SOLIDES IRRADIÉS   (France)

Author keywords

Electron bombardment; Germanium; Glass; Raman spectroscopy

Indexed keywords

COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); ELECTRON BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONTE CARLO METHODS; RAMAN SPECTROSCOPY; SILICA; SURFACE TOPOGRAPHY;

ENERGY DISTRIBUTION; IRRADIATION DOSES;

GLASS;

EID: 1142293730     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.008     Document Type: Article

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