Influence of Si 1-x Ge x interlayer on the initial growth of SiGeC on Si(1 0 0)

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 117-121

  Ariyoshi, S ^a   Takeuchi, S ^a   Nakatsuka, O ^a   Sakai, A ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

RHEED; STM; Strain; Surface structure

Indexed keywords

BAND STRUCTURE; CONDENSATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STRUCTURE;

COMPRESSIVE STRAIN RELAXATION; INTERLAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142292402     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.12.023     Document Type: Conference Paper

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