Degeneracy pressure of electrons: A new effect for Pb islands grown on Si(1 1 1) substrate

Surface Science

Volumn 551, Issue 3, 2004, Pages 151-157

  Wang, Guozhong ^a   Webb, J F ^a   Li, Sheng ^a   Zi, Jian ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Growth; Lead; Metal semiconductor interfaces; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; ELECTRONS; FERMI LEVEL; INTERFACES (MATERIALS); KINETIC ENERGY; MONOLAYERS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SILICON; ULTRATHIN FILMS;

DEGENERACY PRESSURE OF ELECTRONS (DPE); GROWTH; METAL-SEMICONDUCTOR INTERFACES; QUANTUM SIZE EFFECTS (QSE); SURFACE ELECTRONIC PHENOMENA; SURFACE POTENTIAL; SURFACE STATES;

LEAD;

EID: 1142288176     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.009     Document Type: Article

References (16)

1. Schulte F.K. Surf. Sci. 55:1976;427.
2. Zhang Z.Y., Niu Q., Shih C.K. Phys. Rev. Lett. 80:1998;5381.
3. Stroscio J.A., Pierce D.T., Stiles M.D., Zangwill A. Phys. Rev. Lett. 75:1995;4246.
4. Yu H.B., Jiang C.S., Ebert P., Wang X.D., White J.M., Niu Q., Zhang Z.Y., Shih C.K. Phys. Rev. Lett. 88:2002;016102.
5. Aballe L., Rogero C., Horn K. Phys. Rev. B. 65:2002;125319.
6. Chang S.H., Su W.B., Jian W.B., Chang C.S., Chen L.J., Tsong T.T. Phys. Rev. B. 65:2002;245401.
7. Yeh V., Bautista L.B., Wang C.Z., Ho K.M., Tringides M.C. Phys. Rev. Lett. 85:2000;5158.
8. Smith N. Phys. Rev. B. 32:1985;3549.
9. Hupalo M., Yeh V., Bautista L., Kremmer S., Abram E., Tringides M.C. Phys. Rev. B. 64:2001;155307.
10. Materzanini G., Saalfrank P., Lindan P.J.D. Phys. Rev. B. 63:2001;235405.
11. Braun J., Toennies J.P. Surf. Sci. 384:1997;L858.
12. Goyhenex C., Bulou H. Phys. Rev. B. 63:2001;235404.
13. Su W.B., Chang S.H., Jian W.B., Chang C.S., Chen L.J., Tsong T.T. Phys. Rev. Lett. 86:2001;5116.
14. Horikoshi K., Tong X. Phys. Rev. B. 60:1999;13287.
15. Slezak J., Mutombo P., Chab V. Surf. Sci. 454:2000;584.
16. Menzel A., Kammler M., Conred E.H., Yeh V., Hupalo M., Tringides M.C. Physica B. 67:2003;165314.