Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 188-192

  Sugiyama, N ^a   Moriyama, Y ^a   Nakaharai, S ^a   Tezuka, T ^a   Mizuno, T ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Epitaxy; Growth rate; Orientation; SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; MOSFET DEVICES; REACTION KINETICS; SILICON; SILICON COMPOUNDS;

GROWTH RATE; SIGE;

THIN FILMS;

EID: 1142280313     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.097     Document Type: Conference Paper

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