Temperature-dependent absorption edge in AgGaS 2 compound semiconductor

Journal of Alloys and Compounds

Volumn 388, Issue 2, 2005, Pages 190-194

  Eom, S H ^a   Kim, D J ^a   Yu, Y M ^a   Choi, Y D ^a  

^a Mokwon University   (South Korea)

Author keywords

AgGaS 2; Optical properties; Semiconductors

Indexed keywords

AGGAS2; CHALCOPYRITES; OPTICAL CHARACTERISTICS; TEMPERATURE RANGES;

CRYSTAL STRUCTURE; CRYSTALLIZATION; LIGHT ABSORPTION; PHONONS; SINGLE CRYSTALS; STOICHIOMETRY;

SEMICONDUCTING SILVER COMPOUNDS;

EID: 11344273998     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.07.031     Document Type: Article

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