Recent test results of a flight X-band solid-state power amplifier utilizing GaAs MESFET, HFET, and PHEMT technologies

GaAs Reliability Workshop, Proceedings

Volumn 2002-January, Issue , 2002, Pages 37-44

  Nhan, Elbert ^a   Cheng, Sheng ^a   Jose, Marshall J ^a   Fortney, Steve O ^a   Penn, John E ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

Gallium arsenide; HEMTs; High power amplifiers; MESFETs; MODFETs; PHEMTs; Power amplifiers; Solid state circuits; Space technology; Testing

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANTENNA PHASED ARRAYS; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERPLANETARY FLIGHT; MICROWAVE AMPLIFIERS; MICROWAVE ANTENNAS; MODFETS; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NASA; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SPACE APPLICATIONS; SPACE FLIGHT; TESTING; TRACKING (POSITION); TRANSISTORS;

HIGH POWER AMPLIFIER; MESFETS; PHEMTS; SOLID-STATE CIRCUITS; SPACE TECHNOLOGIES;

MESFET DEVICES;

EID: 11244346261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.2002.1167861     Document Type: Conference Paper

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