Azafullerene (C59N)2 thin-film field-effect transistors

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2154-2156

  Kumashiro, Ryotaro ^a   Tanigaki, Katsumi ^a,b   Ohashi, Hirotaka ^b   Tagmatarchis, Nikos ^c   Kato, Haruhito ^d   Shinohara, Hisanori ^d   Akasaka, Takeshi ^e   Kato, Kenichi ^f   Aoyagi, Shinobu ^f   Kimura, Shigeru ^f   Takata, Masaki ^f  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Osaka Prefecture University   (Japan)

^c UNIVERSITY OF TRIESTE   (Italy)

^d NAGOYA UNIVERSITY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL STRUCTURE; DIMERS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; FULLERENES; GRAIN SIZE AND SHAPE; HOLE MOBILITY; MONOMERS; SEMICONDUCTOR GROWTH; THIN FILM TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

ELECTRON CARRIER INJECTION; GATE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 11144357442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1667013     Document Type: Article

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