Spin-dependent tunneling in dielectric LaSrMnO films with mesoscopic conducting clusters

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 325, Issue 1, 2004, Pages 79-85

  Okunev, V D ^a   Samoilenko, Z A ^a   Abal'Oshev, A ^b   Baran, M ^b   Berkowski, M ^b   Gierlowski P ^b   Lewandowski, S J ^b   Szewczyk, A ^b   Szymczak, H ^b   Szymczak, R ^b  

^a DONETSK PHYSICOTECHNICAL INSTITUTE   (Ukraine)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

72.50.+b; 75.30.Vn; 77.65.Dq; Conductivity; Insulator matrix; Magnetic ordering; Manganite thin films; Metallic clusters; Tunneling

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; LANTHANUM COMPOUNDS; MAGNETIZATION; MANGANESE COMPOUNDS; MANGANITES; STRONTIUM COMPOUNDS; SUPERCONDUCTING MATERIALS; TEMPERATURE DISTRIBUTION; TUNNELLING MAGNETORESISTANCE;

75.30.VN; 77.65.DQ; INSULATOR MATRIX; MANGANITE THIN FILMS; METALLIC CLUSTERS;

THIN FILMS;

LANTHANUM; MANGANESE OXIDE; STRONTIUM;

ARTICLE; CHEMICAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRIC CONDUCTIVITY; FILM; MAGNETISM; MOLECULAR PHYSICS;

EID: 11144357437     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.03.032     Document Type: Article

References (18)

1. Helman J.S., Abeles B. Phys. Rev. Lett. 37:1976;1429.
2. Lee S., Hwang H.Y., Shraiman B.I., Ratcliff W.D. II, Cheong S.W. Phys. Rev. Lett. 82:1999;4508.
3. Gupta A., Sun J.Z. J. Magn. Magn. Mater. 200:1999;24.
4. Demin R.V., Koroleva L.I., Szymczak R., Szymczak H. JETP Lett. 75:2002;331.
5. Okunev V.D., Samoilenko Z.A., Svistunov V.M., Abal'oshev A., Dynowska E., Gierlowski P., Klimov A., Lewandowski S.J. J. Appl. Phys. 85:1999;7282.
6. Pashchenko V.P., Khartsev S.I., Cherenkov O.P., Shemyakov A.A., Samoilenko Z.A., Loiko A.D., Kamenev V.I. Inorg. Mater. 35:1999;1294.
7. Okunev V.D., Samoilenko Z.A., Abal'oshev A., Gierlowski P., Klimov A., Lewandowski S.J. Appl. Phys. Lett. 75:1999;1949.
8. Millis A.J., Littlewood P.B. B.I. Shraiman Phys. Rev. Lett. 74:1995;5144.
9. Salamon M.B., Jaime M. Rev. Mod. Phys. 73:2001;583.
10. Mott N.F. Metal-Insulator Transitions. 1990;Taylor & Francis, London.
11. Kar'kin A.E., Shulyatev D.A., Arsenov A.A., Cherepanov V.A., Filonova E.A. JETP. 89:1999;358 Zh. Eksp. Teor. Fiz. 116:1999;671. (in Russian).
12. Samoilenko Z.A., Okunev V.D., Pushenko E.I., Djachenko T.A., Cherenkov A., Gierlowski P., Lewandowski S.J., Abal'oshev A., Klimov A., Szewczyk A. Technol. Phys. 48:2003;250.
13. Bebenin N.G., Zainullina R.I., Mashkautsan V.V., Gaviko V.S., Ustinov V.V., Mukovskii Ya.M., Shulyatev D.A. JETP. 90:2000;1027 Zh. Eksp. Teor. Fiz. 117:2000;1181. (in Russian).
14. Huang Q., Santoro A., Lynn J.W., Erwin R.W., Borchers J.A., Peng J.L., Greene R.L. Phys. Rev. B. 55:1997;14987.
15. Gittleman J.I., Goldstein Y., Bozowic S. Phys. Rev. B. 5:1972;3609.
16. Shklovskii B.I., Efros A.L. Electronic Properties of Doped Semiconductors. 1984;Springer-Verlag, Berlin.
17. Gor'kov L.P., Kresin V.Z. JETP Lett. 67:1998;985.
18. Dzero M.O., Gor'kov L.P., Kresin V.Z. Eur. Phys. J. B. 14:2000;459.