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Volumn 176, Issue 5-6, 2005, Pages 539-546
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Simulation and conductivity studies of defects and ion transport in Sc 2(WO 4) 3
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Author keywords
Atomistic simulation; Defects; Ionic conduction; Scandium tungstate
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Indexed keywords
ATOMISTIC SIMULATIONS;
CELL PARAMETERS;
SCANDIUM TUNGSTATE;
TUNGSTEN IONS;
COMPUTER SIMULATION;
DEFECTS;
ELECTROLYSIS;
IONIC CONDUCTION;
PARAMETER ESTIMATION;
POSITIVE IONS;
STOICHIOMETRY;
SCANDIUM;
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EID: 11144235566
PISSN: 01672738
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssi.2004.09.024 Document Type: Article |
Times cited : (19)
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References (26)
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