Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn 1/3Nb 2/3)O 3-5% PbTiO 3 crystals

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7471-7475

  Lee, Jung Kun ^a   Yi, Jae Yun ^b   Hong, Kug Sun ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN BOUNDARIES; FERROELECTRIC FATIGUE; FERROELECTRIC MEMORY DEVICES;

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRIC CHARGE; ELECTRIC FIELDS; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; FRACTURE TOUGHNESS; GRAIN BOUNDARIES; LEAD COMPOUNDS; OXYGEN; TENSILE STRESS;

CRYSTALS;

EID: 11144229474     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812815     Document Type: Article

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