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Volumn 10, Issue 1, 2005, Pages 19-26

Monte carlo simulation for electron dynamics in semiconductor devices

Author keywords

Electron Transport; Monte Carlo Method; Semiconductor Devices

Indexed keywords

ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ELECTRON VELOCITY ANALYZERS; ITERATIVE METHODS; MONTE CARLO METHODS; QUANTUM THEORY; SCATTERING; SEMICONDUCTOR DEVICES;

EID: 11144222736     PISSN: 1300686X     EISSN: None     Source Type: Journal    
DOI: 10.3390/mca10010019     Document Type: Article
Times cited : (9)

References (16)
  • 1
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • C. Jacoboni and L. Reggiani, The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials, Reviews of Modern Physics, 55 (3), 645-705, 1983.
    • (1983) Reviews of Modern Physics , vol.55 , Issue.3 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 4
    • 0034921567 scopus 로고    scopus 로고
    • The Monte Carlo method for semi-classical charge transport in semiconductor devices
    • H. Kosina, M. Nedjalkov, The Monte Carlo method for semi-classical charge transport in semiconductor devices, Mathematics and Computers in Simulations, 55, 93-102, 2001.
    • (2001) Mathematics and Computers in Simulations , vol.55 , pp. 93-102
    • Kosina, H.1    Nedjalkov, M.2
  • 9
    • 11144226037 scopus 로고    scopus 로고
    • M. Sc. Thesis, Department of Physics, Science Institute of Osmangazi University, Eskişehir, Turkey
    • M. Akarsu, Katilarda elektron dinamiǧi, M. Sc. Thesis, Department of Physics, Science Institute of Osmangazi University, Eskişehir, Turkey, 1997.
    • (1997) Katilarda Elektron Dinamiǧi
    • Akarsu, M.1
  • 10
    • 0001269324 scopus 로고
    • Calculation of distribution functions by exploting the stability of the steady state
    • Rees, H. D., Calculation of distribution functions by exploting the stability of the steady state, Journal of Physical Ohemistry of Solids, 30, 643-655, 1969.
    • (1969) Journal of Physical Ohemistry of Solids , vol.30 , pp. 643-655
    • Rees, H.D.1
  • 14
    • 0014846935 scopus 로고
    • Monte Carlo determination of electron transport properties in gallium arsenide
    • Fawcett W., Boardmann A.D. and Swain S., Monte Carlo determination of electron transport properties in gallium arsenide, Journal of Physical Chemistry of Solids, 31, 1963-1990, 1970
    • (1970) Journal of Physical Chemistry of Solids , vol.31 , pp. 1963-1990
    • Fawcett, W.1    Boardmann, A.D.2    Swain, S.3
  • 15
    • 0036291129 scopus 로고    scopus 로고
    • Monte Carlo simulation of electron transport in InSb
    • Ömer Özbaş, Mustafa Akarsu, Monte Carlo simulation of electron transport in InSb,Turkish journal of physics, 26, (4), 283-287, 2002
    • (2002) Turkish Journal of Physics , vol.26 , Issue.4 , pp. 283-287
    • Ömer Özbaş, M.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.