Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 I, 2004, Pages 3094-3097

  Kim, K H ^a   Na, Y H ^a   Park, Y J ^a   Jung, T R ^b   Kim, S U ^a   Hong, J K ^a  

^a Korea University   (South Korea)

^b Ilsan TechoTown   (South Korea)

Author keywords

CdZnTe; Charge collection efficiency; High resistivity; Polycrystalline; Thermal evaporation method; Time of flight (TOF)

Indexed keywords

CADMIUM COMPOUNDS; CARRIER CONCENTRATION; EVAPORATION; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; THERMAL EFFECTS; X RAY ANALYSIS;

CDZNTE; CHARGE COLLECTION EFFICIENCY; HIGH RESISTIVITY; THERMAL EVAPORATION METHOD; TIME OF FLIGHT;

THICK FILMS;

EID: 11044238397     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839084     Document Type: Conference Paper

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