Integrated monolithic over-voltage protection circuit with adjustable threshold voltage

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2004, Pages 1903-1909

  Alkayal, M Fisal ^a   Crebier, Jean Christophe ^a  

^a ENSIEG   (France)

Author keywords

High voltage applications; Monolithic integration; MOSFET devices; Over voltage protection; Series transistors

Indexed keywords

COST EFFECTIVENESS; DIODES; LARGE SCALE SYSTEMS; MICROPROCESSOR CHIPS; MOSFET DEVICES; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

HIGH VOLTAGE APPLICATIONS; OVER VOLTAGE PROTECTION; SERIES TRANSISTORS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 10944267335     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. H. Nakatake, A. Iwata, "Series connection of IGBTs used multi-level clamp circuit and turn off timing adjustment circuit", IEEE 34nd PESC 2003, pp. 1910-1915.
2. CHING-YUAN WU, "New Internal Overvoltage Protection Structure for the Bipolar Power Transistor" IEEE journal of solid-state circuit, VOL. SC-18, NO. 6, December 1983.
3. N. Iwamuro, "A New Vertical IGBT Structure with a Monolithic Over-Current, Over-voltage, and Over-temperature Sensing and Protecting Circuit", IEEE ELECTRON DEVICE LETTERS, VOL. 16, NO. 9, SEPTEMBER 1995.
4. M.Bruckmann, "Series connection of high voltage IGBT modules", IAS'98, October 98,St Louis, Louisiana.
5. C.Gerster, "Fast High-power, high-voltage switch using series-connected IGBTs with active gate controlled voltage-balancing" IEEE 1994.
6. th International Symposium on Power Semiconductor Devices and ICs 1993
7. http://www.irf.com/
8. G. Venreau "Empirical Power MOSFET modeling: practical characterization and simulation implantation" IAS'02 Pittsburgh, 2002.