Gate driver supply of power switches without galvanic insulation

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2004, Pages 1917-1923

  Mitova, R ^a   Crebier J Ch ^a   Aubard, L ^a   Scheaffer, Ch ^a  

^a ENSIEG   (France)

Author keywords

Component; Gate driver; Monolithic integration; MOSFET devices; Power supply

Indexed keywords

ELECTRIC POWER SYSTEMS; INSULATED GATE BIPOLAR TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; PIEZOELECTRICITY; TIME DOMAIN ANALYSIS; TOPOLOGY; WAVEFORM ANALYSIS;

GALVANIC INSULATION; GATE CAPACITANCE; GATE DRIVER; VOLTAGE DROP;

MOSFET DEVICES;

EID: 10944263922     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. nd ESSDERC'92, pp.145-148
2. Vasic D. et al, "A new MOSFET & IGBT gate device insulated by a piezoelectric transformer, PESC01, Ireland, Vol.3 pp1479-84.
3. I. Zverrev and al, "Comparison of state of the art gate drive techniques for high side switch", Trondheim, EPE'97, p4.250-4.255
4. Power MOSFET Designer's Manual, International Rectifier, Vol.1, pp7 and 131, 1993.
5. Aubard L. et al, "Power Mosfet Switching Waveforms: An Empirical Model Based On A Physical Analysis Of Charge Locations" IEEE-PESC'02, 23-27 juin 2002, Queensland, Australia
6. Crebier J.-C. and al. "Integrated Driver Power Supply for Power Switch",EPE 2003,Toulouse
7. G. Verneau and al, "Empirical power MOSFET modelling: practical characterization and simulation implantation", IAS'02, Pittsburgh, 2002.
8. A. Dartigues et al, "Static electrical behavior of a monolithic power-logic association", Graz, EPE'01
9. R.Mitova, J.C. Crebier, L.Aubard, C. Schaeffer " Fully integrated gate drive supply around power switches " Submitted paper in IEEE Special Issue on Power Integration