Electron-induced changes in absorption edge of amorphous Ge-As-Se films

Journal of Optoelectronics and Advanced Materials

Volumn 4, Issue 1, 2002, Pages 41-44

  Savchenko, N D ^a  

^a UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Chalcogenides; Electron induced changes; Optical band gap; Thin films

Indexed keywords

AMORPHOUS FILMS; CHALCOGENIDES; ELECTRONS; ENERGY GAP; GERMANIUM COMPOUNDS; INORGANIC COMPOUNDS; OPTICAL BAND GAPS; OPTICAL PROPERTIES; SELENIUM COMPOUNDS; THERMAL EVAPORATION;

ABSORPTION EDGES; BOND NETWORKS; HIGH-ENERGY ELECTRON; RANDOM BOND NETWORK; THERMAL-ANNEALING;

THIN FILMS;

EID: 10944242932     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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