Growth of highly (100) oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a buffer layer

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4621-4623

  Choi, Jong Jin ^a   Park, Chee Sung ^a   Park, Gun Tae ^a   Kim, Hyoun Ee ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FERROELECTRIC THIN FILMS; GLASS; HEATING; INTERDIFFUSION (SOLIDS); LANTHANUM COMPOUNDS; LEAD COMPOUNDS; PYROLYSIS; SILICON; SOL-GELS; SUBSTRATES;

BUFFER LAYER; DIFFUSION BARRIERS (DB); LANTHANUM NITRATE; LEAD ZIRCONATE TITANATE (PZT);

FILM GROWTH;

EID: 10944233888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819519     Document Type: Article

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