4.5kV press pack IGBT designed for ruggedness and reliability

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2004, Pages 1534-1539

  Eicher, Simon ^a   Rahimo, Munaf ^a   Tsyplakov, Evgeny ^a   Schneider, Daniel ^a   Kopta, Arnost ^a   Schlapbach, Ulrich ^a   Carroll, Eric ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

IGBT; Modularity; Power cycling; PPI; Press pack; Safe operating area; SCFM

Indexed keywords

MODULARITY; POWER CYCLING; PPI; PRESS PACK; SAFE OPERATING AREAS; SCFM;

AIR CONDITIONING; ANODES; DIODES; ELECTRIC POTENTIAL; HEATING; THERMAL EXPANSION; VENTILATION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 10944230943     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2004.1348674     Document Type: Conference Paper

References (6)

1. T. Fuji et al, "4.5kV-2000A Power Pack IGBT (Ultra High Power Flat-Packaged PT type RC-IGBT)", ISPSD 2000, Toulouse, pp. 33-36.
2. I. Omura et al, "Electrical and Mechanical Package Design for 4.5kV Ultra High Power IEGT with 6kA Turn-Off Capability", ISPSD 2003, Cambridge, pp. 114-117.
3. S. Kaufmann, T. Lang, and R. Chokhawala, "Innovative Press Pack Modules for High Power IGBTs", ISPSD 2001, Osaka, pp. 59-62.
4. A. Nakagawa, T. Matsudai, T. Matsuda, M. Yamaguchi, and T. Ogura "MOSFET-mode ultra-thin wafer PTIGBTs for soft switching application - theory and experiments", ISPSD 2004, Kita-Kyushu, pp. 103-106.
5. M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, and S. Linder, "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes", ISPSD 2004, Kita-Kyushu, pp. 437440.
6. S. Gunturi, J. Assal, D. Schneider, and S. Eicher, "Innovative Metal System for IGBT Press Pack Modules", ISPSD 2003, Cambridge, pp. 110-113.