Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2

Solid State Communications

Volumn 133, Issue 4, 2005, Pages 229-234

  Giri, P K ^a   Kesavamoorthy, R ^b   Panigrahi, B K ^b   Nair, K G M ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

A. Germanium; A. Nanocrystals; D. Ion implantation; E. Photoluminescence

Indexed keywords

ABSORPTION SPECTROSCOPY; ION IMPLANTATION; MONOCHROMATORS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICA; X RAY DIFFRACTION ANALYSIS;

DECAY DYNAMICS; DEFECT DENSITY; NANOCRYSTALS (NC); POTENTIAL APPLICATIONS;

GERMANIUM;

EID: 10844281082     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.11.007     Document Type: Article

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