Alloy compositional fluctuation in InAlGaN epitaxial films

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 3, 2005, Pages 649-652

  Li, D B ^a   Dong, X ^a   Huang, J ^a   Liu, X ^a   Xu, Z ^b   Zhang, Z ^b   Wang, Z ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM ALLOYS; INDIUM ALLOYS; MICROSTRUCTURE; OPTICAL PROPERTIES; ORGANIC SOLVENTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION ELECTRON MICROSCOPY (HREM); HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); NANOCLUSTERS; STRUCTURAL PROPERTIES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 10844231005     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2317-z     Document Type: Article

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