Growth and laser properties of Nd3+ doped La3Ga 5.5Ta0.5O14 crystal

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 344-347

  Kong, H K ^a   Wang, J Y ^a   Zhang, H J ^a   Liu, J H ^a   Lin, Y T ^a   Cheng, X F ^a   Hu, X B ^a   Xu, X G ^a   Shao, Z S ^a   Jiang, M H ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

A2. Czochralski method; B1. Nd:La3Ga5.5Ta 0.5O14; B2. Laser crystal

Indexed keywords

DOPING (ADDITIVES); FLUORESCENCE; LANTHANUM COMPOUNDS; LIGHT ABSORPTION; LIGHT TRANSMISSION; NONLINEAR OPTICS; POSITIVE IONS; PUMPING (LASER); SEMICONDUCTOR LASERS; SPECTROPHOTOMETERS; SPECTRUM ANALYSIS;

ANTI-REFLECTION FILMS; CZOCHRALSKI METHOD; LASER CRYSTAL; ND:LA3GA5.5TA0.5O14;

CRYSTAL GROWTH FROM MELT;

EID: 10744229628     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.109     Document Type: Article

References (10)

1. B. Chai, J.L. Lefaucheur, Y.Y. Ji, H. Qiu, Proceedings of the 1998 IEEE International Frequency Control Symposium, Pasadena, CA, 1998, p. 748.
2. Kawanaka H., Takeda H., Shimamura K., Fukuda T. J. Crystal Growth. 183:1998;274.
3. Bohm J., Heimann R.B., Hengst M., Roewer R., Schindler J. J. Crystal Growth. 204:1999;128.
4. Bohm J., Heimann R.B., Hengst M., Roewer R., Schindler J. J. Crystal Growth. 216:2000;293.
5. Stade J., Bohaty L., Hengst M., Heimann R.B. Cryst. Res. Technol. 37:2002;1113.
6. B.V. Mill, Y.V. Pisarevsky, Proceedings of the 2000 IEEE International Frequency Control Symposium, Kansas City, MO, 2000, p. 133.
7. M.M.C. Chou, S. Jen, B.H.T. Chai, Proceedings of the 2001 IEEE Ultrasonics Symposium, 2001, p. 225.
8. Eichler H.J., Ashkenasi D., Jian H., Kaminskii A.A. Phys. Stat. Sol. (a). 146:1994;833.
9. Wells J.-P.R., Han T.P.J., Yamaga M., Kodama N., Gallagher H.G. J. Lumin. 87:2000;1093.
10. JCPDS Diffraction file, 47-0532.