Properties of Ion-Implanted High-Power Angled-Grating Distributee-Feedback Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1172-1178

  Paschke, Katrin ^a   Bogatov, Alexander ^b   Bugge, Frank ^a   Drakin, Alexander E ^b   Fricke, Jörg ^a   Güther, Reiner ^a   Stratonnikov, Alexey A ^b   Wenzel, Hans ^a   Erbert, Götz ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

Angled grating; Distributed feedback (DFB) laser; High power semiconductor laser; Implantation; Simulation; Slanted Bragg grating

Indexed keywords

COMPUTER SIMULATION; CONTINUOUS WAVE LASERS; DIFFRACTION GRATINGS; ELECTROOPTICAL EFFECTS; ION IMPLANTATION; LIGHT EMISSION; OPTICAL WAVEGUIDES; OPTIMIZATION; SEMICONDUCTOR LASERS;

ANGLED GRATING; HIGH-POWER SEMICONDUCTOR LASERS; SLANTED BRAGG GRATING;

DISTRIBUTED FEEDBACK LASERS;

EID: 10744221295     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.820915     Document Type: Conference Paper

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