Erratum: Publisher's Note: Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy (Applied Physics Letters (2003) 83 (4788))

Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 452-

  Bhuiyan, Ashraful Ghani ^a   Sugita, Kenichi ^a   Kasashima, Ken ^a   Hashimoto, Akihiro ^a   Yamamoto, Akio ^a,b   Davydov, Valery Yu ^c  

^a UNIVERSITY OF FUKUI   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c IOFFE INSTITUTE   (Russian Federation)

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EID: 10744219501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644578     Document Type: Erratum

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