A model of nonequilibrium phase transitions in a system of radiation-induced defects of silicon and germanium

Chemical Physics Reports

Volumn 15, Issue 10, 1996, Pages 1521-1525

  Prokop'ev, E P ^a  

^a Malinin Mat Sci Research Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10644283211     PISSN: 10741550     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. P.T.Landsberg and A.Pimpale, J. Phys. C.: Sol. St. Phys., 9, No.4, 1243 (1976).
3. W.Frank, U.Gösele, H.Mehrer, and A.Seeger, Diffusion in Silicon and Germanium, (Acad. Press Inc., New York, 1984), p.63.
4. M.Marooka and M.Yoshida, Jap. J. Appl. Phys., 29, No.3, 457 (1989).
5. T.Okino and M.Yoshida, Jap. J. Appl. Phys., 28, No.1, 86 (1989).