A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2061-2068

  Cheng, C F ^a   Jagar, Singh ^a   Poon, M C ^a   Kok, C W ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Crystallization; Grain boundaries; Polysilicon; Statistical modeling; Thin film transistors (TFTs)

Indexed keywords

CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MATHEMATICAL MODELS; POLYSILICON; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICE MANUFACTURE; STATISTICAL METHODS;

METAL INDUCED LATERAL CRYSTALLIZATION; POLYSILICON THIN FILM TRANSISTOR; STATISTICAL MODELING;

THIN FILM TRANSISTORS;

EID: 10644282269     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838325     Document Type: Article

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