The European answer to the integration issues of excimer laser annealing in MOS technology

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 92-99

  Privitera, V ^a   La Magna, A ^a   Fortunato, G ^b   Camalleri, M ^c   Magri, A ^c   Simon, F ^d   Svensson, B C ^e  

^a CNR   (Italy)

^b IFN CNR   (Italy)

^c STMICROELECTRONICS   (Italy)

^d MicroLas   (Germany)

^e UNIVERSITY OF OSLO   (Norway)

Author keywords

Excimer laser annealing; Irradiation; Semiconductor

Indexed keywords

CMOS INTEGRATED CIRCUITS; EXCIMER LASERS; ION IMPLANTATION; LASER BEAM EFFECTS; LASER BEAMS; LIQUID CRYSTALS; POLYSILICON; RAPID THERMAL ANNEALING; SEGREGATION (METALLOGRAPHY); SILICON WAFERS; SOLIDIFICATION; THERMODYNAMICS;

ENERGY DENSITY; EXCIMER LASER ANNEALING (ELA); LIQUID-CRYSTAL INTERFACES; THERMAL GRADIENT;

MOSFET DEVICES;

EID: 10644279943     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.090     Document Type: Conference Paper

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