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Volumn 114-115, Issue SPEC. ISS., 2004, Pages 77-81
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Evolution of end-of-range defects in Si after Xe implantation studied by grazing incidence diffuse X-ray scattering
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Author keywords
Crystal microstructure defects; Stacking faults; X ray scattering
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
CRYSTAL MICROSTRUCTURE;
RAPID THERMAL ANNEALING;
SEMICONDUCTOR JUNCTIONS;
SILICON;
STACKING FAULTS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY SCATTERING;
X RAYS;
BURGERS VECTOR;
GRAZING INCIDENCE;
THERMAL DIFFUSE SCATTERING (TDS);
TRANSIENT ENHANCED DIFFUSION (TED);
ION IMPLANTATION;
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EID: 10644263073
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.074 Document Type: Conference Paper |
Times cited : (4)
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References (10)
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