Origin of PL intensity increase of CaMgSi2O6:Eu 2+ phosphor after baking process for PDPs application

Solid State Communications

Volumn 133, Issue 3, 2005, Pages 197-201

  Im, W B ^a   Kang, J H ^a   Lee, D C ^a   Lee, S ^a   Jeon, D Y ^a   Kang, Y C ^b   Jung, K Y ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

A. CaMgSi2O6:Eu2+; A. Phosphor; D. Optical properties; E. Luminescence

Indexed keywords

FLAT PANEL DISPLAYS; HEAT TREATMENT; IMAGE QUALITY; IRRADIATION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PHOTONS; PLASMA DISPLAY DEVICES; PYROLYSIS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

CAMGSIO2O6:EU2+; PLASMA DISPLAY PANELS (PDP); VACUUM ULTRAVIOLET (VUV) PHOTONS;

PHOSPHORS;

EID: 10444286065     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.10.016     Document Type: Article

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