Nanocrystalline copper and nickel as ultra high-density chip-to-package interconnections

Proceedings - Electronic Components and Technology Conference

Volumn 2, Issue , 2004, Pages 1647-1651

  Bansal, S ^a   Saxena, A ^b   Tummala, Rao R ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b 3202 Bell Engineering Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUICHANNEL ANGULAR EXTRUSION (ECAE); MICROCRYSTALLINE; NANOHARDNESS; NANOSCALE INTERCONNECTIONS;

COPPER; ELECTROMIGRATION; ELECTRONICS PACKAGING; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HARDNESS; METALLOGRAPHIC MICROSTRUCTURE; NICKEL;

NANOSTRUCTURED MATERIALS;

EID: 10444270955     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. International Technology Roadmap for Semiconductors-Assembly and packaging (2001 edition).
2. ASTM E8-98, Standard Test Methods for Tension Testing of Metallic Materials.
3. Standard Test Method for Plane- Strain Fracture Toughness of Metallic Materials.
4. ASTM E 1820-96, Standard Test Method for Measurement of Fracture Toughness.
5. Ebrahimi F., Bourne G. R., Kelly M. S., Matthews T. E., Nanostructured Materials, 11, 3, pp. 343 (1999).
6. Nieman, G.W., Weertman, J.R., Siegel, R. (1991), J. Mater. Res., 6, 1012.
7. H. V. Atkinson, Acta Metall. 36, 469 (1988)
8. S. K. Ganapathi, D. M. Owen and A. H. Chokshi, "The kinetics of grain growth in nanocrystalline copper", Scripta Metall., vol. 25, pp. 2699-2704, 1991.