Quantum size effect in antimony thin films and its application

Infrared Physics and Technology

Volumn 46, Issue 3, 2005, Pages 263-266

  Yi, Xinjian ^a,b   Wang, Hongchen ^a   Chen, Sihai ^a,b   Lai, Jianjun ^a,b   He, Miao ^a   Wang, Shuangfao ^a,b   Wong, George K ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b National Laboratory for Photonics   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Infrared device; Infrared materials; Narrow gap materials; Quantum size effect; Semimetal to Semiconductor Transition

Indexed keywords

CRYSTALS; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INFRARED MATERIALS; NARROW GAP MATERIALS; QUANTUM SIZE EFFECTS;

ANTIMONY;

EID: 10444270159     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2004.06.006     Document Type: Article

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