Continuous operation at 200°C device junction temperature: The final frontier for RF power semiconductor plastic packaging

Proceedings - Electronic Components and Technology Conference

Volumn 1, Issue , 2004, Pages 437-443

  Abdo, Dave ^a   Danaher, Frank ^a   Elliot, Alex ^a   Mahalingam, Mali ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE JUNCTION TEMPERATURE; LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICES; PLASTIC PACKAGING; RELIABILITY TESTING;

BIPOLAR TRANSISTORS; COSTS; DIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

ELECTRONICS PACKAGING;

EID: 10444240080     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Burger, Wayne et.al "Aluminum - Based Metallization Enhances Device Reliability," Microwaves and RF, Vol.37, No. 10 (1998), pp. 61-68.
2. Harman, George G. Wire Bonding in Microelectronics Materials, Processes, Reliability and Yield - McGraw -Hill (New York 1997) pp. 115-128, 146-147
3. Philofsky, E., "Intermetallic Formation in Gold-Aluminum Systems," Solid State Electronics Vol 13 1970, pp 1391-1399
4. IPC/JEDEC J-STD-020B: Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. Arlington, VA (2002), pp 7-16.
5. Dave Abdo, Mali Mahalingam, Mike McCloskey, Vish Viswanathan, Fernando Santos, Alex Elliott, H.S. Chen, and Jeanne Pavio, "A Systems Approach to RF Package Development," S 1999 Wireless Circuits, Interconnection, and Assembly Workshop, pp 24-32.