Characterization complex voltage contrast image using atomic force microscopy

Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004

Volumn , Issue , 2004, Pages 487-490

  Chen, C H ^a   Shen, C M ^a   Huang, C M ^a   Hsia, Y F ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; IMAGE ANALYSIS; INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; PRINTED CIRCUIT DESIGN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; STATIC RANDOM ACCESS STORAGE;

EMISSION CURRENTS; PASSIVE VOLTAGE CONTRAST (PVC); SCANNING PROBE MICROSCOPES (SPM); SECONDARY ELECTRONS (SE);

FAILURE ANALYSIS;

EID: 10444231292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. th Ed.", (1999)
2. Jone C. Lee, J.H. Chuang, "Fault Isolation in Contact Level by Using Conductive Atomic Force Microscopy", ISTSA processings (2003)
3. Jone C Lee, C.H.Chen, David Su, J.H. Chuang, "Investigation of sensitivity improvement on Passive Voltage Contrast for Defect Isolation", ESREF processings (2002)
4. Application notes, Digital Instrument, Veeco Metrology Group.