Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature

Journal of Physics D: Applied Physics

Volumn 37, Issue 3, 2004, Pages 413-415

  Zhang, Ye ^a   Jia, Hongbo ^a   Yu, Dapeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CATALYSTS; DENDRIMERS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SILICON WAFERS; SINGLE CRYSTALS; STRESS RELAXATION; SYNTHESIS (CHEMICAL); THERMAL EXPANSION;

WAFER SCALE PRODUCTION; WURTZITE;

ZINC OXIDE;

EID: 1042304480     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/3/018     Document Type: Conference Paper

References (5)

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3. Decremps F et al 2002 Phys. Rev. B 65 1-4
4. Whangbo S W et al 2000 J. Korean Phys. Soc. 37 456-60
5. Sears G W et al 1955 Acta Metall. 4 361-2