Induced Nucleation of Diamond Films on ZnS Substrates Precoated with Ceramic Interlayer

Chinese Physics Letters

Volumn 21, Issue 2, 2004, Pages 406-409

  Gao, Xu Hui ^a   Lu, Fan Xiu ^a   Tong, Yu Mei ^a   Guo, Hui Bin ^a   Tang, Wei Zhong ^a   Li, Cheng Ming ^a   Chen, Guang Chao ^a   Yu, Huai Zhi ^b   Cheng, Hong Fan ^b   Yang, Hai ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; CORROSION PROTECTION; DIAMOND FILMS; II-VI SEMICONDUCTORS; NUCLEATION; SUBSTRATES; THERMAL EXPANSION; WIDE BAND GAP SEMICONDUCTORS;

CERAMIC INTERLAYER; CH 4; CHEMICAL VAPOUR DEPOSITION; DIAMOND NUCLEATION; DIAMONDS FILMS; INDUCED NUCLEATION; MICROWAVE PLASMA; MULTI-SPECTRUM; NUCLEATION OF DIAMONDS; THERMAL EXPANSION COEFFICIENTS;

ZINC SULFIDE;

EID: 1042290715     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/2/054     Document Type: Article

References (6)

1. Daniel C and Harris 1995 SPIE 2552 325
2. Goela J S and Askinazi J 1999 SPIE 3705 227
3. Miller A J, Reece D M and Hudson M D 1997 Diamond Relat. Mater. 6 386
4. Daniel C and Harris 1997 SPIE 3080 17
5. Brierley C J, Costello M C, Hudson M D and Bettles T J 1994 SPIE 2286 308
6. Korenstein R, Goldman L, Hallock R, Ondercin R and Kelly E 1997 SPIE 3060 181