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Volumn 10, Issue 3, 2003, Pages 215-219

P-Type Partial Conductivity of Donor(La)-Doped BaTiO3

Author keywords

Defect structure; Donor doped BaTiO3; MLCC; P type conductivity; Thermopower

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; FERROELECTRIC MATERIALS; MIXTURES; PRESSURE EFFECTS; STOICHIOMETRY; THERMODYNAMICS;

EID: 1042275400     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JECR.0000011220.03915.a4     Document Type: Article
Times cited : (16)

References (21)
  • 7
    • 1042270401 scopus 로고    scopus 로고
    • U.S. Patent, No. 3,330,697 (11 July 1967)
    • M. Pechini, U.S. Patent, No. 3,330,697 (11 July 1967).
    • Pechini, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.