Theoretical investigation of a blue hydroxyquinaldine-based aluminum(III) complex

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 321, Issue 3, 2004, Pages 194-198

  Wong, K Y ^a   Lo, C F ^a   Sham, W Y ^a,b   Fong, H H ^b   So, S K ^b   Leung, L M ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

Ab initio calculations; Bis(8 hydroxyquinolinolato) aluminum hydroxide Al(Mq)2OH

Indexed keywords

ALUMINUM HYDROXIDE; CALCULATIONS; CHEMICAL BONDS; COMPUTATION THEORY; ORGANIC LIGHT EMITTING DIODES (OLED); QUANTUM CHEMISTRY;

AB INITIO CALCULATIONS; ABSORPTION AND EMISSIONS; ALUMINUM COMPLEXES; COMPUTATIONAL RESULTS; FRONTIER ORBITALS; HARTREE-FOCK METHODS; LIGHT EMITTING PROPERTIES; THEORETICAL INVESTIGATIONS;

DENSITY FUNCTIONAL THEORY;

ALUMINUM DERIVATIVE; BIS(8 HYDROXYQUINOLINOLATO)ALUMINUM HYDROXIDE; HYDROXIDE; HYDROXYL GROUP; METHYL GROUP; QUINALDINE DERIVATIVE; QUINOLINOL DERIVATIVE; UNCLASSIFIED DRUG;

ABSORPTION; ARTICLE; CALCULATION; CHEMICAL BOND; DENSITY FUNCTIONAL THEORY; DIODE; GEOMETRY; LIGHT; LUMINANCE; TECHNIQUE; THEORY;

EID: 1042266407     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2003.12.030     Document Type: Article

References (13)

1. Tang C.W., VanSlyke S.A. Appl. Phys. Lett. 51:1987;913.
2. Chan L.H., Yeh H.C., Chen C.T. Adv. Mater. 13:2001;1637.
3. So S.K., Lee K.M., Choi W.K., Leung L.M., Lo W.Y. Jpn. J. Appl. Phys. 40:2001;5959.
4. Sapochak L.S., Padmaperuma A., Washton N., Endrino F., Schmett G.T., Marshall J., Fogarty D., Burrows P.E., Forrest S.R. J. Am. Chem. Soc. 123:2001;6300.
5. Chen C.H., Shi J.M. Coord. Chem. Rev. 171:1998;161.
6. Matsumura M., Akai T. Jpn. J. Appl. Phys. 35:1996;5373.
7. Leung L.M., Lo W.Y., So S.K., Lee K.M., Choi W.K. J. Am. Chem. Soc. 122:2000;5640.
8. Frisch M.J., Trucks G.W., Schlegel H.B., Scuseria G.E., Robb M.A., Cheeseman J.R., Zakrzewski V.G., Montgomery J.A. Jr., Stratmann R.E., Burant J.C., Dapprich S., Millam J.M., Daniels A.D., Kudin K.N., Strain M.C., Farkas O., Tomasi J., Barone V., Cossi M., Cammi R., Mennucci B., Pomelli C., Adamo C., Clifford S., Ochterski J., Petersson G.A., Ayala P.Y., Cui Q., Morokuma K., Malick D.K., Rabuck A.D., Raghavachari K., Foresman J.B., Cioslowski J., Ortiz J.V., Baboul A.G., Stefanov B.B., Liu G., Liashenko A., Piskorz P., Komaromi I., Gomperts R., Martin R.L., Fox D.J., Keith T., Al-Laham M.A., Peng C.Y., Nanayakkara A., Gonzalez C., Challacombe M., Gill P.M.W., Johnson B., Chen W., Wong M.W., Andres J.L., Gonzalez C., Head-Gordon M., Replogle E.S., Pople J.A. Gaussian 98, Revision A.7. 1998;Gaussian, Pittsburgh, PA.
9. Halls M.D., Schlegel H.B. Chem. Mater. 13:2001;2632.
10. Kushto G.P., Iizumi Y., Kido J., Kafafi Z.H. J. Phys. Chem. A. 104:2000;3670.
11. Tao X.T., Suzuki H., Wada T., Sasabe H., Miyata S. Appl. Phys. Lett. 75:1999;1655.
12. P.S. Bryan, F.V. Lovecchio, S.A. VanSlyke, US patent 5 141 671 (1992).
13. Metzger R.A. Comp. Semiconductor. 1:1995;26.