Significant hopping conduction and oxygen diffusion in implanted YSZ at low temperatures of 100-250 °C

Solid State Ionics

Volumn 175, Issue 1-4, 2004, Pages 323-327

  Raz, S ^a   Stelzer, N ^a,c   Kalish, R ^a   Maier, J ^b   Riess, I ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b Max Planck Instiutue for Solid State Research   (Germany)

^c ARC SEIBERSDORF RESEARCH GMBH   (Austria)

Author keywords

Ion implantation; MIEC; Mixed ionic electronic conduction; Oxygen exchange with YSZ; YSZ

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTORS; ELECTRODES; LOW TEMPERATURE EFFECTS; OXYGEN; YTTRIUM COMPOUNDS;

MIEC; MIXED IONIC ELECTRONIC CONDUCTION; OXYGEN EXCHANGE WITH YSZ; YSZ;

ION IMPLANTATION;

EID: 10144257901     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2004.03.035     Document Type: Conference Paper

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