InGaAs-on-Si photodetectors for high-sensitivity detection

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5406, Issue PART 1, 2004, Pages 1-12

  Bitter, M ^a   Pan, Z ^a   Kristjansson, S ^a   Boman, L ^a   Gold, R ^a   Pauchard, A ^a  

^a Nova Crystals Inc   (United States)

Author keywords

Avalanche photodiode; High sensitivity; InGaAs; P i n photodiode; Silicon; Wafer bonding

Indexed keywords

AVALANCHE PHOTODIODES (APD); HIGH-SENSITIVITY DETECTION; INGAAS; P-I-N-PHOTODIODES; WAFER BONDING TECHNOLOGY;

AVALANCHE DIODES; BONDING; PHOTODIODES; PHOTONS; PROBABILITY; QUANTUM EFFICIENCY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON; X RAY DIFFRACTION ANALYSIS;

PHOTODETECTORS;

EID: 10044266620     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.541660     Document Type: Conference Paper

References (18)

1. A. Lacaita et al., Single photon detection beyond 1μm: performance of commercially available InGaAs/InP detectors, Appl. Opt., Vol. 35, No. 16, 1996, pp. 2986-2996.
2. W. R. Clark et al., Reliable high gain-bandwidth product InGaAs/InP avalanche photodiode for 10Gb/s receivers, OFC, San Diego (CA), 1999.
3. I. Watanabe et al., High-speed high reliability planar structure supperlatice avalanche photodiodes for 10-Gb/s optical receivers, IEEE J. Lightwave Technol., Vol. 18, No. 12, 2000, pp. 2200-2207.
4. C. Lenox et al., Resonant-Cavity InGaAs-InAlAs Avalanche Photodiodes with Gain-Bandwidth product of 290GHz, IEEE Photon. Technol. Lett., Vol. 11, No. 9, 1999, pp. 1162-1164.
5. A.R. Hawkins et al., Silicon Hetero-Interface Photodetector, LEOS Annual Meeting, San Francisco (CA), 1995.
6. A. R. Hawkins et al., High gain-bandwidth-product Silicon heterointerface photodetector, Appl. Phys. Lett., Vol. 70, 1996, pp. 303-305.
7. Y. Kang et al., Fused InGaAs/Si avalanche photodiodes with low noise performance, IEEE Photon. Technol. Lett., Vol. 14, No. 11, 2002, pp. 1593-1595.
8. A. Pauchard et al., Wafer-bonded InGaAs/Silicon avalanche photodiodes, SPIE Photonics West, Optoelectronics, San Jose (CA), 2002.
9. A. Pauchard et al, Wafer bonding for high-performance photodetectors: a mature technology?, LEOS Annual Meeting, Glasgow (UK), 2002.
10. A. Pauchard et al., Prospects for low noise and high speed InGaAs-on-Silicon photodetectors, LEOS Annual Meeting, Tucson (AZ), 2003.
11. Z. Pan et al., InGaAs/Si avalanche photodiodes fabricated by wafer bonding, Proc. of SPIE, Vol.4905, 2002, pp. 491-495.
12. F. E. Ejeckam et al., High-performance InGaAs phohodetectors on Si and GaAs substrates, Appl. Phys. Lett., Vol. 67, No. 26, 1995, pp. 3936-3938
13. B. F. Levine et al., 20 GHz high performance planar Si/InGaAs p-i-n photodetector, Appl. Phys. Lett., Vol. 70, No. 18, 1997, pp. 2449-2451.
14. B. F. Levine et al., Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients, App. Phys. Lett., Vol. 71, No. 11, 1997, pp. 1507-1509.
15. D.A. Tuchinsky et al., High-power InGaAs-on-Si pin RF photodiodes, Electron. Lett., Vol. 39, No. 14, 2003, pp. 1084-1086.
16. R. J. McIntyre, Multiplication noise in uniform avalanche diodes, IEEE Trans. Electron Devices, Vo. 13, No. 1, 1966, pp. 164-168.
17. G. P. Agrawal, Fiber-optic Communication Systems, Wiley, New York, 1997.
18. Y. Kang et al., InGaAs-on-Si Single Photon Avalanche Photodetectors, submitted to Appl. Phys. Lett., March 2003.