The effect of Au thickness and annealing conditions on SiO2 formation in the Au/Si system

Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 282-289

  Julies, B A ^a   Adams, Daniel ^a   Mayer, J W ^b  

^a UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^b Arizona State University   (United States)

Author keywords

Au Si systems; Cross sectional TEM; Low temperature Si oxidation; SiO2 formation

Indexed keywords

ANNEALING; BINARY MIXTURES; ENERGY DISPERSIVE SPECTROSCOPY; GOLD; GRAIN GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

AU/SI SYSTEMS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); SIO2 FORMATION;

SILICA;

EID: 10044248332     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.127     Document Type: Article

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