Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

Microelectronics Reliability

Volumn 45, Issue 1, 2005, Pages 39-46

  Schlünder, Christian ^a   Brederlow, Ralf ^a   Ankele, Benno ^b   Gustin, Wolfgang ^a   Goser, Karl ^c   Thewes, Roland ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; PARAMETER ESTIMATION; STRESS ANALYSIS; SWITCHING;

DOPING PROFILES; INVERTER CIRCUITS; NEGATIVE BIAS TEMPERATURE STRESS (NBTS); POWER CONSUMPTION;

MOSFET DEVICES;

EID: 10044231431     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.03.017     Document Type: Article

References (11)

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