Selectively doped germanium THz laser

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5411, Issue , 2004, Pages 207-215

  Dolguikh, M V ^a   Muravjov, A V ^a   Peale, R E ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER ABSORPTION; DOPING CONCENTRATION; LATTICE ABSORPTION; QUANTUM CASCADE LASERS;

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; LASER APPLICATIONS; MAGNETIC FIELDS; MONTE CARLO METHODS; SCATTERING; SEMICONDUCTOR MATERIALS;

GERMANIUM;

EID: 10044226124     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.542565     Document Type: Conference Paper

References (18)

1. E. Brundermann, "Widely tunable far-infrared hot-hole semiconductor lasers" in Long wavelength infrared semiconductor lasers, edited by Hong K. Choi (Wiley, NJ, 2004), pp. 279-343
2. S. G. Pavlov, Kh. Zhukavin, E. E. Orlova, V. N. Shastin, A. V. Kirsanov, H.-W. Huebers, K. Auien, H. Riemann, "Stimulated emission from donor transitions in silicon," Phys. Rev. Lett. 84, 5220 (2000)
3. B. S. Williams, H. Callebaut, S. Kumar, Q. Hu, J. L. Reno, "3.4 THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation," Appl. Phys. Lett. 82, 1015 (2003)
4. R. Kohler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti and F. Rossi, "Terahertz semiconductor-heterostructure laser", Nature 417, 156 (2002)
5. M. Rochat, L Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, and D. Ritchie, "Low-threshold terahertz quantum-cascade lasers", Appl. Phys. Lett. 81, 1381 (2002)
6. R. Brazis, F Keilmann, "Lattice absorption of Ge in the far infrared", Solid State Communications, 70, 1109, (1989)
7. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications of covalent materials," Rev. Mod. Phys. 55, 645 (1983)
8. C. Jacoboni, R. Brunetti and P. Bordone, "Monte Carlo simulation of semiconductor transport," in Theory of Transport Properties of Semiconductor Nanostructures, ed. Eckehard Scholl, (Chapman & Hall, London, 1998), p. 59
9. G. L. Bir and G. E. Pikus, Symmetry and strain-induced effects in semiconductors, (Wiley, NY, 1974).
10. P. Lawaetz, "Low-field mobility and galvanomagnetic properties of holes in germanium with phonon scattering", Phys Rev. 174, 867 (1968)
11. J. D. Wiley, "Polar mobility of holes in II-V compounds," Phys. Rev. B 4, 2485 (1970)
12. E.V.Starikov, P.N.Shiktorov, "Numerical simulation of far infrared emission under population inversion of hot sub-bands", Optical and Quantum Electronics, 23, S177, (1991)
13. B. K. Ridley, "Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference", J. Phys. C: Solid State Phys.,10, p. 1589, 1977
14. V. N. Shastin, "Hot hole inter-sub-band transition p-Ge FIR laser", Opt. Quantum Electron., 23 pp. S111-S131, (1991)
15. M. V. Dolguikh, A. V. Muravjov, R. E. Peale, "Intervalence band THz laser in selectively-doped semiconductor structure" in "Novel In-Plane Semiconductor Lasers III" edited by C. F. Gmachl and D. P. Bour, Proc SPIE 5365, 22 in press (2004)
16. Yu T. Rebane, "Sum rules for oscillator strength of intersubband and intrasubband transitions of free holes in cubic semiconductors", Sov. Phys. Solid State 25, 1094 (1983)
17. W. C. Dunlap, Jr., "Diffusion of Impurities in Germanium", Phys. Rev. 94 1531 (1954).
18. M. Rogozia, S. W. Teitsworth, H. T. Grahn, K. H. Ploog, "Relocation dynamics of domain boundaries in semiconductor superlattices", Phys. Rev. B, 65, 205303 (2002)