Growth kinetics of stoichiometric SiC layers formed by high fluence carbon implantation into silicon using a metal vapor vacuum arc ion source

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 227, Issue 3, 2005, Pages 282-288

  Wang, L ^a   Zhao, Y E ^a   Chen, Dihu ^a   Wong, S P ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Implantation; Infrared absorption; Phase transformation; SiC

Indexed keywords

ANNEALING; CARBON; GROWTH KINETICS; ION IMPLANTATION; ION SOURCES; NUCLEATION; PHASE TRANSITIONS; STOICHIOMETRY; VACUUM APPLICATIONS;

INFRARED ABSORPTION; INFRARED SPECTRA; THERMAL ANNEALING; THREE-DIMENSIONAL GROWTH MODEL;

SILICON CARBIDE;

EID: 10044225743     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.08.022     Document Type: Article

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