Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 816-821

  Shenai Khatkhate, Deodatta V ^a   Goyette, Randall J ^a   DiCarlo Jr , Ronald L ^a   Dripps, Gregory ^a  

^a ROHM AND HAAS COMPANY   (United States)

Author keywords

A1. Safety; A1. Toxicity; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Metalorganics; B1. Oxides; Bl. Precursors

Indexed keywords

ACCIDENT PREVENTION; CRYSTAL GROWTH; GALLIUM COMPOUNDS; HAZARDOUS MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; OXIDES; TOXICITY;

CO-DECOMPOSITION; HIGH SPEED ELECTRONIC DEVICES; METALORGANICS; PRECURSORS;

SEMICONDUCTOR MATERIALS;

EID: 10044222263     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.007     Document Type: Conference Paper

References (8)

1. H.M. Manasevit, Appl. Phys. Lett. 12 (1968) 156.
2. Material Safety Data Sheets, Rohm and Haas Electronic Materials LLC, North Andover, MA.
3. M. Roychowdhury, Am. Ind. Hyg. Assoc. J. 54 (1993) 607.
4. R.J. Lewis, Sr, Sax's Dangerous Properties of Industrial Materials, 10th ed., vol. 1-3 and information therein, Wiley, New York, 2000.
5. E. Bingham, B. Cohrssen, C.H. Powell, (Eds.), Patty's Toxicology, fifth ed., vol. 1 -8 and information therein, Wiley, New York, 2001.
6. See for example, G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, Second ed., Academic Press, New York, 1999 and references therein.
7. OSHA's CFR Title 29 Part 1910.1000, 2003; ACGIH TLV and BEIs, 2003.
8. J.A. Van Gompel, M. Czerniak, Techn. Digest, CS-MAX 2002, p. 211.