Ab initio calculations of field emission from ultrathin Si(100) films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2461-2465

  Gohda, Y ^a,b,c   Watanabe, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; APPROXIMATION THEORY; BOUNDARY CONDITIONS; CRYSTAL ATOMIC STRUCTURE; DIMERS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON EMISSION; ELECTRON SCATTERING; FERMI LEVEL; FOURIER TRANSFORMS; GROUND STATE; LIGHT REFLECTION; PROBABILITY DISTRIBUTIONS; SILICON; SURFACE PHENOMENA;

ADDIMERS; EMISSION CURRENTS; SILICON FILMS;

ULTRATHIN FILMS;

EID: 0942300076     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1624266     Document Type: Article

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