Mask process proximity correction for next-generation mask fabrication

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 3041-3045

  Kim, Soon Ho ^a   Choi, Sung Woon ^a   Sohn, Jung Min ^a   Park, Jong Rak ^b  

^a SAMSUNG Electronics   (South Korea)

^b Chosun University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONVOLUTION; DATA REDUCTION; DETERIORATION; DISTANCE MEASUREMENT; DRY ETCHING; ELECTRON BEAMS; ERROR CORRECTION; INTEGRATION; MATHEMATICAL MODELS; OPTICAL RESOLVING POWER;

CRITICAL DIMENSION (CD); MASK PROCESS CORRECTION (MPC);

MASKS;

EID: 0942300013     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (3)

1. ITRS Roadmap 2002. (http://www.public.itrs.net)
2. F. Abbout et al., Proc. SPIE 4562, 1 (2002).
3. Y. Sato et al., Proc. SPIE 4889 (to be published).