Influence of ambient on hydrogen release from p-type gallium nitride

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 76-83

  Myers, S M ^a   Vaandrager, B L ^a,b   Wampler, W R ^a   Seager, C H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Orion International Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DESORPTION; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; HYDROGEN; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PLASMAS; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; VACUUM APPLICATIONS;

ISOTHERMAL HEATING; NUCLEAR REACTION ANALYSIS; RESOLVABLE EFFECT;

GALLIUM NITRIDE;

EID: 0942288927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629135     Document Type: Article

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