-
2
-
-
0033525774
-
-
P. Poncharal, Z. L. Wang, D. Ugarte, and W. A. de Heer, Science 283, 1513 (1999).
-
(1999)
Science
, vol.283
, pp. 1513
-
-
Poncharal, P.1
Wang, Z.L.2
Ugarte, D.3
De Heer, W.A.4
-
3
-
-
0034819152
-
-
J. H. Hafner, C.-L. Cheung, T. H. Oosterkamp, and C. M. Lieber, J. Phys. Chem. B 105, 743 (2001).
-
(2001)
J. Phys. Chem. B
, vol.105
, pp. 743
-
-
Hafner, J.H.1
Cheung, C.-L.2
Oosterkamp, T.H.3
Lieber, C.M.4
-
4
-
-
0029911943
-
-
H. Dai, J. H. Hafner, A. G. Rinzler, D. T. Colbert, and R. E. Smalley, Nature (London) 384, 147 (1996).
-
(1996)
Nature (London)
, vol.384
, pp. 147
-
-
Dai, H.1
Hafner, J.H.2
Rinzler, A.G.3
Colbert, D.T.4
Smalley, R.E.5
-
5
-
-
0032675094
-
-
S. Akita, H. Nishijima, Y. Nakayama, F. Tokumasu, and K. Takeyasu, J. Phys. D 32, 1044 (1999).
-
(1999)
J. Phys. D
, vol.32
, pp. 1044
-
-
Akita, S.1
Nishijima, H.2
Nakayama, Y.3
Tokumasu, F.4
Takeyasu, K.5
-
6
-
-
0942272782
-
-
U.S. Patent No. 3,475,234, 1969
-
R. Kerwin and D. Klein, U.S. Patent No. 3,475,234, 1969.
-
-
-
Kerwin, R.1
Klein, D.2
-
9
-
-
0003459529
-
-
Physical Electronics, Eden Prairie, MN
-
J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Eden Prairie, MN, 1995).
-
(1995)
Handbook of X-ray Photoelectron Spectroscopy
-
-
Moulder, J.F.1
Stickle, W.F.2
Sobol, P.E.3
Bomben, K.D.4
-
10
-
-
3743086676
-
-
2 film thickness using standard XPS theory [C. S. Fadley, R. J. Baird, W. Siekhaus, T. Novakov, and S. Å. L. Berström, J. Electron Spectrosc. 4, 93 (1974)]. Literature values for the mean free paths of Si 2p photoelectrons in silicon (1.6 nm) and silicon dioxide (2.6 nm) were used in these calculations [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988); M. Suzuki, H. Ando, Y. Higashi, H. Takenaka, H. Shimada, N. Matsubayashi, M. Imamura, S. Kurosawa, S. Tanuma, and C. J. Powell, Surf. Interface Anal. 29, 330 (2000)]. Ellipsometry is known to yield thickness measurements up to 40% higher than XPS [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988)], Here, our ellipsometry measurements were ∼25% higher than our XPS measured thicknesses, within the expected agreement of the methods.
-
(1974)
J. Electron Spectrosc.
, vol.4
, pp. 93
-
-
Fadley, C.S.1
Baird, R.J.2
Siekhaus, W.3
Novakov, T.4
Berström, S.Å.L.5
-
11
-
-
45549117634
-
-
2 film thickness using standard XPS theory [C. S. Fadley, R. J. Baird, W. Siekhaus, T. Novakov, and S. Å. L. Berström, J. Electron Spectrosc. 4, 93 (1974)]. Literature values for the mean free paths of Si 2p photoelectrons in silicon (1.6 nm) and silicon dioxide (2.6 nm) were used in these calculations [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988); M. Suzuki, H. Ando, Y. Higashi, H. Takenaka, H. Shimada, N. Matsubayashi, M. Imamura, S. Kurosawa, S. Tanuma, and C. J. Powell, Surf. Interface Anal. 29, 330 (2000)]. Ellipsometry is known to yield thickness measurements up to 40% higher than XPS [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988)], Here, our ellipsometry measurements were ∼25% higher than our XPS measured thicknesses, within the expected agreement of the methods.
-
(1988)
Surf. Sci.
, vol.197
-
-
Hochella, M.F.1
Carim, A.H.2
-
12
-
-
0000225416
-
-
2 film thickness using standard XPS theory [C. S. Fadley, R. J. Baird, W. Siekhaus, T. Novakov, and S. Å. L. Berström, J. Electron Spectrosc. 4, 93 (1974)]. Literature values for the mean free paths of Si 2p photoelectrons in silicon (1.6 nm) and silicon dioxide (2.6 nm) were used in these calculations [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988); M. Suzuki, H. Ando, Y. Higashi, H. Takenaka, H. Shimada, N. Matsubayashi, M. Imamura, S. Kurosawa, S. Tanuma, and C. J. Powell, Surf. Interface Anal. 29, 330 (2000)]. Ellipsometry is known to yield thickness measurements up to 40% higher than XPS [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988)], Here, our ellipsometry measurements were ∼25% higher than our XPS measured thicknesses, within the expected agreement of the methods.
-
(2000)
Surf. Interface Anal.
, vol.29
, pp. 330
-
-
Suzuki, M.1
Ando, H.2
Higashi, Y.3
Takenaka, H.4
Shimada, H.5
Matsubayashi, N.6
Imamura, M.7
Kurosawa, S.8
Tanuma, S.9
Powell, C.J.10
-
13
-
-
45549117634
-
-
2 film thickness using standard XPS theory [C. S. Fadley, R. J. Baird, W. Siekhaus, T. Novakov, and S. Å. L. Berström, J. Electron Spectrosc. 4, 93 (1974)]. Literature values for the mean free paths of Si 2p photoelectrons in silicon (1.6 nm) and silicon dioxide (2.6 nm) were used in these calculations [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988); M. Suzuki, H. Ando, Y. Higashi, H. Takenaka, H. Shimada, N. Matsubayashi, M. Imamura, S. Kurosawa, S. Tanuma, and C. J. Powell, Surf. Interface Anal. 29, 330 (2000)]. Ellipsometry is known to yield thickness measurements up to 40% higher than XPS [M. F. Hochella and A. H. Carim, Surf. Sci. 197, L260 (1988)], Here, our ellipsometry measurements were ∼25% higher than our XPS measured thicknesses, within the expected agreement of the methods.
-
(1988)
Surf. Sci.
, vol.197
-
-
Hochella, M.F.1
Carim, A.H.2
|