Resolution improvement for a maskless microion beam reduction lithography system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2724-2727

  Jiang, Ximan ^a,b   Ji, Qing ^a,c   Ji, Lili ^a,b   Chang, Audrey ^a,b   Leung, Ka Ngo ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Etcheverry Hall MCI 730   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; ELECTROMAGNETIC WAVE DIFFRACTION; INTEGRATED CIRCUITS; ION BEAM LITHOGRAPHY; MASKS; MATHEMATICAL MODELS; ULTRAVIOLET RADIATION;

AXIAL CHROMATIC ABERRATIONS; MICROION BEAM REDUCTION LITHOGRAPHY (MMRL); NUMERICAL APERTURE;

ION BEAMS;

EID: 0942278347     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1622937     Document Type: Conference Paper

References (8)

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