Molecular-beam epitaxy growth of arsenic film and its semimetal-to-semiconductor transition

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5452-5454

  He, M ^a,b   Yuan, X C ^a   Ngo, N Q ^a   Bu, J ^a   Yi, X J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM THICKNESS; QUANTUM SIZE EFFECTS;

ARSENIC; CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; ENERGY GAP; FILM GROWTH; HALL EFFECT; HIGH ENERGY ELECTRON DIFFRACTION; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; METALLOIDS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 0942277750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637449     Document Type: Article

References (8)

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